Member of The Electrochemical Society
Valeri Ligatchev was born in Russia in 1959. He had obtained his MS, PhD and Doctor of Science (equivalent of Habilitation) degrees in Moscow Power Engineering Institute (MPEI, Russia) in years
1982, 1988 and 1998, respectively. In MPEI he worked as a researcher (senior researcher) and lecturer from 1988 till 1999. Since 1999 he is working (till 2014) and living in Singapore: in Nanyang
Technological University, (1999 – 2005), NanoScience Innovation Pte. Ltd. (2005 – 2006), and in Institute of High Performance Computing, Agency of Science, Technology and Research (A*STAR),
(2006 – 2014). He became an author (co-author) of 82 referred journal articles, 106 conference abstracts and proceeding articles as well as of 7 books and book chapters. He is a member of The
Electrochemical Society since 2007. His name had been included in 2011 Edition of Marquis Who's Who in the World.
His main areas of scientific interest and expertise comprise of experimental, computational and theoretical investigations on electronic, optical, vibrational, relaxation time and defect states spectra as
well as thermal properties of various (predominantly spatially non-homogeneous) semiconductors (including low-dimensional ones), insulators and even superconductors, comprising of nominally undoped and heavily doped polycrystalline and nano-crystalline diamond(s), flakes and ribbons of two-dimensional semiconductors, silicon-germanium ‘quantum dots’, silicon micro- and nano-wires and ‘molecular wires’, amorphous hydrogenated silicon-based semiconductor films, porous ‘low-k’ organic and inorganic insulating layers, as well as ceramic insulators with so-called ‘gigantic dielectric response’
(GDR). His ‘Generalized Skettrup Model’ (GSM) yielded substantial impact in several important areas: from realistic simulations on near-band-gap and intra-band optical and electronic properties of polycrystalline and spatially non-homogeneous amorphous semiconductors as well as of their low-dimensional counterparts to convincing estimations on the harmonic and anharmonic lattice thermal capacity of such spatially non-homogeneous materials. The essentially many-particle GSM allows ‘first-principles’ quantitative evaluation and interpretation on effect of alteration in morphological parameters (i.e., in shape, sizes and crystalline orientation – if any – of grains, columns, cones, etc.) on experimentally accessible features of near-band-gap and intra-gap electronic and optical spectra, density of defect states, as well as on key components of the lattice thermal capacityof those spatially non-homogeneous materials and of diamond-based superconductors. The many-particle states and spaces of the GSMare related closely to their bosonic counterparts, introduced by famous Russian physicist Vladimir Fock elsewhere in year 1932.
He also substantiated condensed phases of Fröhlich polarons as the essence of the GDR phenomenon. Furthermore, he had implemented broadly advanced mathematical methods at
deconvolution and interpretation of data of several well-established techniques of defect states spectroscopy, used at actual experimental investigations of defects states of various semiconductors
and insulators. He was also involved in reviewing of hundreds of scientific manuscripts for The Electrochemical Society (Journal of The Electrochemical Society, Electrochemical and Solid State Letters), Elsevier (Journal of Alloys and Compounds, Chemical Engineering Journal), Institute of Physics (Journal of Physics D: Applied Physics, Physica Scripta, New Journal of Physics), Springer (Journal of Nanoparticle Research) and World Scientific (Modern Physics Letter B) in years 2004 – 2022.